PART |
Description |
Maker |
SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32 512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8)页模式的EEPROM 512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8)页模式EEPROM 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
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SILICON STORAGE TECHNOLOGY INC Silicon Storage Technology, Inc.
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SLA24C04-D_P SLA24C04-D-3_P SLA24C04-S_P SLA24C04- |
4 Kbit 512 x 8 bit Serial CMOS EEPROMs I2C Synchronous 2-Wire Bus Page Protection Mode 4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode
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SIEMENS[Siemens Semiconductor Group]
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M24512-HR M24512-R M24256-BHR M24256-BR M24512-WDW |
64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 512 Kbit and 256 Kbit serial I?C bus EEPROM with three Chip Enable lines 512 Kbit and 256 Kbit serial I虏C bus EEPROM with three Chip Enable lines 512 Kbit and 256 Kbit serial I2C bus EEPROM with three Chip Enable lines
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STMicroelectronics
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M27512 M27512-3F6 27512 M27256-20F6 M27256-25F6 M2 |
NMOS 512 Kbit (64Kb x 8) UV EPROM, 250ns NND - NMOS 512 KBIT (64KB X8) UV EPROM NMOS 512K 64K x 8 UV EPROM NMOS管为512k 64KX8的紫外线存储 NMOS 512K 64K x 8 UV EPROM
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
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EN29F512-70SC EN29F512-70SCP EN29F512-70SI EN29F51 |
512 Kbit (64K x 8-bit) 5V Flash Memory 512千位4K的8位)5V的快闪记忆体
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Electronic Theatre Controls, Inc. Eon Silicon Solution Inc. Eon Silicon Solution In...
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CY14B512PA-SFXI CY14B512PA-SFXIT CY14E512PA |
64K X 8 NON-VOLATILE SRAM, PDSO16 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16 512-Kbit (64 K x 8) SPI nvSRAM with Real Time Clock Full-featured RTC
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Cypress Semiconductor, Corp.
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AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28B |
64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with Page Write and Software Data Protection 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection From old datasheet system 64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28 64K (8K x 8) Battery-VoltageParallel EEPROM with Page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28
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ATMEL[ATMEL Corporation] Atmel, Corp.
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UHR-5/4000-D48 UHR-12/1650-D48 UHR-12/1650-D12 UHR |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 型DC - DC电压转换 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 型DC - DC电压转换
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EEPROM NIC Components, Corp. PLX Technology, Inc.
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M24512-WMW6TP M24256-BR M24256-BRDW6G M24256-BRDW6 |
512 Kbit and 256 Kbit Serial I2C bus EEPROM with three Chip Enable lines
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STMICROELECTRONICS[STMicroelectronics]
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AM27C512-15F6 AM27C512-120PC AM27C512-70DI ADVANCE |
64K X 8 UVPROM, 120 ns, CDIP28 64K X 8 OTPROM, 90 ns, PDIP28 64K X 8 UVPROM, 55 ns, CDIP28 64K X 8 UVPROM, 90 ns, CDIP28 64K X 8 UVPROM, 70 ns, CDIP28 IC 集成电路 512 Kilobit (64 K x 8-Bit) CMOS EPROM
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ADVANCED MICRO DEVICES INC SPANSION LLC Rochester Electronics, LLC AMD
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M48T512Y10 M48T512V-70PM1 M48T512Y-70PM1 M48T512V- |
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER庐 SRAM 5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER? SRAM
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STMicroelectronics
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